国家/地区 China（7）
关键词 GRAPHENE（2）
出版物 ADVANCED ELECTRONIC.（2） CARBON（2）
出版时间 2015（2） 2018（2）
机构 CHINESE ACAD SCI（7）
作者 NIU JB（7）

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

Dual-band, polarization-insensitive metamaterial perfect absorber based on monolayer graphene in the mid-infrared range

RESULTS IN PHYSICS

LI HL, NIU JB, WANG GY

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

ADVANCED MATERIALS

ZHAO XL, MA J, XIAO XH, LIU Q, SHAO L, CHEN D, LIU S, NIU JB, ZHANG XM, WANG Y, CAO RR, WANG W, DI ZF, LV HB, LONG SB, LIU M

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

SMALL

ZHAO XL, LIU S, NIU JB, LIAO L, LIU Q, XIAO XH, LV HB, LONG SB, BANERJEE W, LI WQ, SI SY, LIU M

Hydroxyl-free buffered dielectric for graphene field-effect transistors

CARBON

JIN Z, MA P, WANG SQ, PENG SG, ZHANG DY, SHI JY, NIU JB, YU GH, WANG XY, LI M

The sheet resistance of graphene under contact and its effect on the derived specific contact resistivity

CARBON

PENG SA, JIN Z, MA P, ZHANG DY, SHI JY, NIU JB, WANG XY, WANG SQ, LI M, LIU XY, YE TC, ZHANG YH, CHEN ZY, YU GH