国家/地区 China（7）
关键词 GRAPHENE（3） DFT（2） NUCLEATION（2）
出版物 ACS APPLIED MATERIA.（2） APPLIED SURFACE SCI.（2） CARBON（2）
出版时间 2020（4） 2018（3）
机构 SHANDONG UNIV（7）
作者 CHENG XF（7）

Effect of BN seeds on locating and promoting the initial nucleation of graphene on Cu substrate and its mechanism: A theoretical study

APPLIED SURFACE SCIENCE

SUN XC, LUO XY, SU Z, YU FP, LI YL, CHENG XF, ZHAO X

Theoretical prediction of eliminating the buffer layer and achieving charge neutrality for epitaxial graphene on 6H-SiC(0001) via boron compound intercalations

CARBON

LUO XY, SUN XC, LI YL, YU FP, SUN L, CHENG XF, ZHAO X

A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism

ACS APPLIED MATERIALS INTERFACES

SU Z, SUN XC, LIU XZ, ZHANG J, SUN L, ZHANG X, LIU ZX, YU FP, LI YL, CHENG XF, DING Y, ZHAO X

Charge-neutral epitaxial graphene on 6H-SiC(0001) via FeSi intercalation

CARBON

LUO XY, LIANG GJ, SUN XC, LI YL, YU FP, WEI L, CHENG XF, SUN L, ZHAO X

Graphene Nucleation Preference at CuO Defects Rather Than Cu2O on Cu(111): A Combination of DFT Calculation and Experiment

ACS APPLIED MATERIALS INTERFACES

SUN XC, SU Z, ZHANG J, LIU XZ, LI YL, YU FP, CHENG XF, ZHAO X

A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

APPLIED SURFACE SCIENCE

YANG ZY, XU SC, ZHAO LL, ZHANG J, WANG ZP, CHEN XF, CHENG XF, YU FP, ZHAO X

Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

ZHANG J, YANG ZY, SUN L, YU FP, LI YL, CHENG XF, LIU XZ, ZHAO X