国家/地区 France（10）
关键词 GRAPHENE（10）
出版物 2D MATERIALS（2） NANOTECHNOLOGY（2）
出版时间 2015（4） 2014（3）
机构 UNIV PARIS 1.（7）
作者 DOLLFUS P（10）

Conduction gap in graphene strain junctions: direction dependence

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

A Klein-tunneling transistor with ballistic graphene

2D MATERIALS

WILMART Q, BERRADA S, TORRIN D, NGUYEN VH, FEVE G, BERROIR JM, DOLLFUS P, PLACAIS B

Improved performance of graphene transistors by strain engineering

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, DOLLFUS P

Thermoelectric performance of disordered and nanostructured graphene ribbons using Green's function method

JOURNAL OF COMPUTATIONAL ELECTRONICS

MAZZAMUTO F, SAINTMARTIN J, NGUYEN V, CHASSAT C, DOLLFUS P

Controllable spin-dependent transport in armchair graphene nanoribbon structures

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, DO VN, BOURNEL A, NGUYEN VL, DOLLFUS P

Transport gap in vertical devices made of incommensurately misoriented graphene layers

JOURNAL OF PHYSICS DAPPLIED PHYSICS

NGUYEN VH, DOLLFUS P

Strain-induced modulation of Dirac cones and van Hove singularities in a twisted graphene bilayer

2D MATERIALS

NGUYEN VH, DOLLFUS P

Enhanced Seebeck effect in graphene devices by strain and doping engineering

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

NGUYEN MC, NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Thermoelectric effects in graphene nanostructures

JOURNAL OF PHYSICSCONDENSED MATTER

DOLLFUS P, NGUYEN VH, SAINTMARTIN J

Strain-induced conduction gap in vertical devices made of misoriented graphene layers

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P