国家/地区 France（5）
关键词
出版物 JOURNAL OF APPLIED .（2）
出版时间 2011（5）
机构 UNIV PARIS 1.（5）
作者 NGUYEN VH（5）

Resonant tunneling structures based on epitaxial graphene on SiC

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN VH, BOURNEL A, DOLLFUS P

Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions

APPLIED PHYSICS LETTERS

NGUYEN VH, MAZZAMUTO F, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons

PHYSICAL REVIEW B

MAZZAMUTO F, NGUYEN VH, APERTET Y, CAER C, CHASSAT C, SAINTMARTIN J, DOLLFUS P

Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, BOURNEL A, DOLLFUS P

Spin-polarized current and tunneling magnetoresistance in ferromagnetic gate bilayer graphene structures

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, BOURNEL A, DOLLFUS P