国家/地区 France（3）
关键词 GRAPHENE（2） STRAIN（2）
出版物
出版时间 2014（3）
机构 UNIV PARIS 1.（2）
作者 NGUYEN HV（3）

Conduction gap in graphene strain junctions: direction dependence

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Enhanced thermoelectric figure of merit in vertical graphene junctions

APPLIED PHYSICS LETTERS

NGUYEN VH, NGUYEN MC, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Improved performance of graphene transistors by strain engineering

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, DOLLFUS P