国家/地区 France（6）
关键词 GRAPHENE（3） STRAIN（2）
出版物
出版时间 2014（6）
机构 UNIV PARIS 1.（3）
作者 NGUYEN VH（6）

Conduction gap in graphene strain junctions: direction dependence

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Enhanced thermoelectric figure of merit in vertical graphene junctions

APPLIED PHYSICS LETTERS

NGUYEN VH, NGUYEN MC, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

A Klein-tunneling transistor with ballistic graphene

2D MATERIALS

WILMART Q, BERRADA S, TORRIN D, NGUYEN VH, FEVE G, BERROIR JM, DOLLFUS P, PLACAIS B

The interplay between the Aharonov-Bohm interference and parity selective tunneling in graphene nanoribbon rings

JOURNAL OF PHYSICSCONDENSED MATTER

NGUYEN VH, NIQUET YM, DOLLFUS P

Improved performance of graphene transistors by strain engineering

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, DOLLFUS P

On the non-linear effects in graphene devices

JOURNAL OF PHYSICS DAPPLIED PHYSICS

NGUYEN VH, ALARCON A, BERRADA S, DO VN, STMARTIN J, QUERLIOZ D, BOURNEL A, DOLLFUS P