国家/地区 France（4）
关键词
出版物
出版时间 2015（4）
机构 UNIV STRASBO.（3）
作者 BERCIAUD S（4）

Doping- and interference-free measurement of I-2D/I-G in suspended monolayer graphene blisters

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

METTEN D, FROEHLICHER G, BERCIAUD S

Raman spectroscopy of electrochemically gated graphene transistors: Geometrical capacitance, electron-phonon, electron-electron, and electron-defect scattering

PHYSICAL REVIEW B

FROEHLICHER G, BERCIAUD S

Landau Level Spectroscopy of Electron-Electron Interactions in Graphene

PHYSICAL REVIEW LETTERS

FAUGERAS C, BERCIAUD S, LESZCZYNSKI P, HENNI Y, NOGAJEWSKI K, ORLITA M, TANIGUCHI T, WATANABE K, FORSYTHE C, KIM P, JALIL R, GEIM AK, BASKO DM, POTEMSKI M

Distance Dependence of the Energy Transfer Rate from a Single Semiconductor Nanostructure to Graphene

NANO LETTERS

FEDERSPIEL F, FROEHLICHER G, NASILOWSKI M, PEDETTI S, MAHMOOD A, DOUDIN B, PARK S, LEE JO, HALLEY D, DUBERTRET B, GILLIOT P, BERCIAUD S