国家/地区 France（4）
关键词 BAND ALIGNMENT（2）
出版物
出版时间 2016（4）
机构 UNIV PARIS SACLAY（4）
作者 HENCK H（4）

Bandgap inhomogeneity of MoS2 monolayer on epitaxial graphene bilayer in van der Waals p-n junction

CARBON

BEN AZIZA Z, HENCK H, DI FELICE D, PIERUCCI D, CHASTE J, NAYLOR CH, BALAN A, DAPPE YJ, JOHNSON ATC, OUERGHI A

van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties

ACS NANO

BEN AZIZA Z, HENCK H, PIERUCCI D, SILLY MG, LHUILLIER E, PATRIARCHE G, SIROTTI F, EDDRIEF M, OUERGHI A

Electrolytic phototransistor based on graphene-MoS2 van der Waals p-n heterojunction with tunable photoresponse

APPLIED PHYSICS LETTERS

HENCK H, PIERUCCI D, CHASTE J, NAYLOR CH, AVILA J, BALAN A, SILLY MG, ASENSIO MC, SIROTTI F, JOHNSON ATC, LHUILLIER E, OUERGHI A

Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures

NANO LETTERS

PIERUCCI D, HENCK H, AVILA J, BALAN A, NAYLOR CH, PATRIARCHE G, DAPPE YJ, SILLY MG, SIROTTI F, JOHNSON ATC, ASENSIO MC, OUERGHI A