国家/地区 France（3）
关键词 DOPING（2）
出版物
出版时间
机构 UNIV PARIS 06（3）
作者 KLEIDER JP（3）

Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

APPLIED PHYSICS LETTERS

BOUTCHICH M, AREZKI H, ALAMARGUY D, HO KI, SEDIRI H, GUNES F, ALVAREZ J, KLEIDER JP, LAI CS, OUERGHI A

Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

JOURNAL OF PHYSICSCONDENSED MATTER

AREZKI H, BOUTCHICH M, ALAMARGUY D, MADOURI A, ALVAREZ J, CABARROCAS PRI, KLEIDER JP, YAO F, LEE YH

Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid

NANOTECHNOLOGY

GUNES F, AREZKI H, PIERUCCI D, ALAMARGUY D, ALVAREZ J, KLEIDER JP, DAPPE YJ, OUERGHI A, BOUTCHICH M