国家/地区 France（6）
关键词 BAND ALIGNMENT（2）
出版物 SCIENTIFIC REPORTS（2）
出版时间 2016（4）
机构 UNIV PARIS SACLAY（6）
作者 SIROTTI F（6）

Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures

PHYSICAL REVIEW B

BEN AZIZA Z, PIERUCCI D, HENCK H, SILLY MG, DAVID C, YOON M, SIROTTI F, XIAO K, EDDRIEF M, GIRARD JC, OUERGHI A

van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties

ACS NANO

BEN AZIZA Z, HENCK H, PIERUCCI D, SILLY MG, LHUILLIER E, PATRIARCHE G, SIROTTI F, EDDRIEF M, OUERGHI A

Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer

SCIENTIFIC REPORTS

PIERUCCI D, BRUMME T, GIRARD JC, CALANDRA M, SILLY MG, SIROTTI F, BARBIER A, MAURI F, OUERGHI A

Electrolytic phototransistor based on graphene-MoS2 van der Waals p-n heterojunction with tunable photoresponse

APPLIED PHYSICS LETTERS

HENCK H, PIERUCCI D, CHASTE J, NAYLOR CH, AVILA J, BALAN A, SILLY MG, ASENSIO MC, SIROTTI F, JOHNSON ATC, LHUILLIER E, OUERGHI A

Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures

NANO LETTERS

PIERUCCI D, HENCK H, AVILA J, BALAN A, NAYLOR CH, PATRIARCHE G, DAPPE YJ, SILLY MG, SIROTTI F, JOHNSON ATC, ASENSIO MC, OUERGHI A

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

SCIENTIFIC REPORTS

SEDIRI H, PIERUCCI D, HAJLAOUI M, HENCK H, PATRIARCHE G, DAPPE YJ, YUAN S, TOURY B, BELKHOU R, SILLY MG, SIROTTI F, BOUTCHICH M, OUERGHI A