国家/地区 France（3）
关键词
出版物
出版时间 2015（3）
机构 UNIV STRASBOURG（3）
作者 BERCIAUD S（3）

Doping- and interference-free measurement of I-2D/I-G in suspended monolayer graphene blisters

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

METTEN D, FROEHLICHER G, BERCIAUD S

Raman spectroscopy of electrochemically gated graphene transistors: Geometrical capacitance, electron-phonon, electron-electron, and electron-defect scattering

PHYSICAL REVIEW B

FROEHLICHER G, BERCIAUD S

Distance Dependence of the Energy Transfer Rate from a Single Semiconductor Nanostructure to Graphene

NANO LETTERS

FEDERSPIEL F, FROEHLICHER G, NASILOWSKI M, PEDETTI S, MAHMOOD A, DOUDIN B, PARK S, LEE JO, HALLEY D, DUBERTRET B, GILLIOT P, BERCIAUD S