国家/地区 Germany（2）
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出版物
出版时间
机构 MAX PLANCK I.（2）
作者 GOBELT M（2）

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer

NANO LETTERS

HEILMANN M, MUNSHI AM, SARAU G, GOBELT M, TESSAREK C, FAUSKE VT, VAN HELVOORT ATJ, YANG JF, LATZEL M, HOFFMANN B, CONIBEER G, WEMAN H, CHRISTIANSEN S

Growth of GaN Micro- and Nanorods on Graphene-Covered Sapphire: Enabling Conductivity to Semiconductor Nanostructures on Insulating Substrates

CRYSTAL GROWTH DESIGN

HEILMANN M, SARAU G, GOBELT M, LATZEL M, SADHUJAN S, TESSAREK C, CHRISTIANSEN S