国家/地区 Germany（5）
关键词 GRAPHENE（3） FERROELECTRIC（2） FIELDEFFECT TRANSIS.（2）
MEMORY（2）
出版物
出版时间 2020（3） 2018（2）
机构 MAX PLANCK I.（4）
作者 HEIDLER J（5）

Designing Multi-Level Resistance States in Graphene Ferroelectric Transistors

ADVANCED FUNCTIONAL MATERIALS

AMIRI MH, HEIDLER J, MULLEN K, GKOUPIDENIS P, ASADI K

Doping free transfer of graphene using aqueous ammonia flow

RSC ADVANCES

AMIRI MH, HEIDLER J, HASNAIN A, ANWAR S, LU H, MULLEN K, ASADI K

Design Rules for Memories Based on Graphene Ferroelectric Field Effect Transistors

ACS APPLIED ELECTRONIC MATERIALS

HASSANPOUR M, HEIDLER J, MULLEN K, ASADI K

Spatially resolved solid-state reduction of graphene oxide thin films

MATERIALS HORIZONS

MORANTMINANA MC, HEIDLER J, GLASSER G, LU H, BERGER R, GILGONZALEZ N, MULLEN K, DE LEEUW DM, ASADI K

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

SOLIDSTATE ELECTRONICS

HEIDLER J, YANG S, FENG XL, MULLEN K, ASADI K