国家/地区 Germany（3）
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出版时间
机构 PHYS TECH BUNDESANSTALT（3）
作者 SEYLLER T（3）

Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene

ADVANCED FUNCTIONAL MATERIALS

PAKDEHI DM, SCHADLICH P, NGUYEN TTN, ZAKHAROV AA, WUNDRACK S, NAJAFIDEHAGHANI E, SPECK F, PIERZ K, SEYLLER T, TEGENKAMP C, SCHUMACHER HW

Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy

PHYSICAL REVIEW B

WUNDRACK S, PAKDEHI DM, SCHADLICH P, SPECK F, PIERZ K, SEYLLER T, SCHUMACHER HW, BAKIN A, STOSCH R

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

2D MATERIALS

KRUSKOPF M, PAKDEHI DM, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, GOTZ M, BARINGHAUS J, APROJANZ J, TEGENKAMP C, LIDZBA J, SEYLLER T, HOHLS F, AHLERS FJ, SCHUMACHER HW