国家/地区 Germany（5）
关键词
出版物
出版时间 2012（5）
机构 UNIV ERLANGE.（5）
作者 WEBER HB（5）

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

NATURE COMMUNICATIONS

HERTEL S, WALDMANN D, JOBST J, ALBERT A, ALBRECHT M, RESHANOV S, SCHONER A, KRIEGER M, WEBER HB

Origin of logarithmic resistance correction in graphene

NATURE PHYSICS

JOBST J, WEBER HB

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

APPLIED PHYSICS LETTERS

KRACH F, HERTEL S, WALDMANN D, JOBST J, KRIEGER M, RESHANOV S, SCHONER A, WEBER HB

Electron-Electron Interaction in the Magnetoresistance of Graphene

PHYSICAL REVIEW LETTERS

JOBST J, WALDMANN D, GORNYI IV, MIRLIN AD, WEBER HB