国家/地区 Germany（8）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2012（3） 2011（2） 2014（2）
机构 UNIV ERLANGEN NURNBERG（8）
作者 KRIEGER M（8）

Monolithic circuits with epitaxial graphene/silicon carbide transistors

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

HERTEL S, KRIEGER M, WEBER HB

Epitaxial graphene as an electrode material: a transistor testbed for organic and all-carbon semiconductors

RSC ADVANCES

BAYAYA E, WALDMANN D, KRIEGER M, WEBER HB

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

NATURE COMMUNICATIONS

HERTEL S, WALDMANN D, JOBST J, ALBERT A, ALBRECHT M, RESHANOV S, SCHONER A, KRIEGER M, WEBER HB

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

APPLIED PHYSICS LETTERS

KRACH F, HERTEL S, WALDMANN D, JOBST J, KRIEGER M, RESHANOV S, SCHONER A, WEBER HB

Current annealing and electrical breakdown of epitaxial graphene

APPLIED PHYSICS LETTERS

HERTEL S, KISSLINGER F, JOBST J, WALDMANN D, KRIEGER M, WEBER HB

Bottom-gated epitaxial graphene

NATURE MATERIALS

WALDMANN D, JOBST J, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

Gateless patterning of epitaxial graphene by local intercalation

NANOTECHNOLOGY

SORGER C, HERTEL S, JOBST J, STEINER C, MEIL K, ULLMANN K, ALBERT A, WANG Y, KRIEGER M, RISTEIN J, MAIER S, WEBER HB