国家/地区 Germany（6）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2008（4）
机构 UNIV ERLANGEN NURNBERG（6）
作者 LEY L（6）

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RISTEIN J, ZHANG WY, SPECK F, OSTLER M, LEY L, SEYLLER T

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

NATURE MATERIALS

EMTSEV KV, BOSTWICK A, HORN K, JOBST J, KELLOGG GL, LEY L, MCCHESNEY JL, OHTA T, RESHANOV SA, ROHRL J, ROTENBERG E, SCHMID AK, WALDMANN D, WEBER HB, SEYLLER T

Epitaxial graphene: a new material

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

SEYLLER T, BOSTWICK A, EMTSEV KV, HORN K, LEY L, MCCHESNEY JL, OHTA T, RILEY JD, ROTENBERG E, SPECK F

Raman spectra of epitaxial graphene on SiC(0001)

APPLIED PHYSICS LETTERS

ROHRL J, HUNDHAUSEN M, EMTSEV KV, SEYLLER T, GRAUPNER R, LEY L

Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

PHYSICAL REVIEW B

EMTSEV KV, SPECK F, SEYLLER T, LEY L, RILEY JD

Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy

PHYSICAL REVIEW B

LAUFFER P, EMTSEV KV, GRAUPNER R, SEYLLER T, LEY L, RESHANOV SA, WEBER HB