国家/地区 Germany（20）
关键词 GRAPHENE（3）
出版物 APPLIED PHYSICS LET.（3） PHYSICAL REVIEW B（3） NATURE MATERIALS（2）
NATURE PHYSICS（2）
出版时间 2012（5） 2011（4） 2015（4） 2014（3）
机构 UNIV ERLANGEN NURNBERG（20）
作者 WEBER HB（20）

Monolithic circuits with epitaxial graphene/silicon carbide transistors

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

HERTEL S, KRIEGER M, WEBER HB

Dislocations in bilayer graphene

NATURE

BUTZ B, DOLLE C, NIEKIEL F, WEBER K, WALDMANN D, WEBER HB, MEYER B, SPIECKER E

Epitaxial graphene as an electrode material: a transistor testbed for organic and all-carbon semiconductors

RSC ADVANCES

BAYAYA E, WALDMANN D, KRIEGER M, WEBER HB

Detection of the Kondo effect in the resistivity of graphene: Artifacts and strategies

PHYSICAL REVIEW B

JOBST J, KISSLINGER F, WEBER HB

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

NATURE COMMUNICATIONS

HERTEL S, WALDMANN D, JOBST J, ALBERT A, ALBRECHT M, RESHANOV S, SCHONER A, KRIEGER M, WEBER HB

Origin of logarithmic resistance correction in graphene

NATURE PHYSICS

JOBST J, WEBER HB

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

APPLIED PHYSICS LETTERS

KRACH F, HERTEL S, WALDMANN D, JOBST J, KRIEGER M, RESHANOV S, SCHONER A, WEBER HB

Electron-Electron Interaction in the Magnetoresistance of Graphene

PHYSICAL REVIEW LETTERS

JOBST J, WALDMANN D, GORNYI IV, MIRLIN AD, WEBER HB

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

APPLIED PHYSICS LETTERS

SPECK F, JOBST J, FROMM F, OSTLER M, WALDMANN D, HUNDHAUSEN M, WEBER HB, SEYLLER T