国家/地区 India（4）
关键词 FIELD EFFECT TRANSI.（2）
出版物 APPLIED SURFACE SCI.（2） PHYSICAL REVIEW B（2）
出版时间 2021（2）
机构
作者 MOHANTA MK（4）

Giant tunability in electrical contacts and doping via inconsiderable normal electric field strength or gating for a high-performance in ultrathin field effect transistors based on 2D BX/graphene (X = P, As) van der Waals heterobilayer

APPLIED SURFACE SCIENCE

MOHANTA MK, DE SARKAR A

Valley Hall effect in graphene-like SnX (X = Si, Ge) buckled monolayers with high charge carrier mobility and low lattice thermal conductivity

PHYSICAL REVIEW B

MOHANTA MK, IS F, DE SARKAR A

2D HfN2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain

APPLIED SURFACE SCIENCE

MOHANTA MK, SARKAR AD

Effective modulation of ohmic contact and carrier concentration in a graphene-MgX (X = S, Se) van der Waals heterojunction with tunable band-gap opening via strain and electric field

PHYSICAL REVIEW B

MOHANTA MK, ARORA A, DE SARKAR A