国家/地区 Iran（9）
关键词 GRAPHENE（3） BAND STRUCTURE（2） ELASTIC CONSTANT（2）
GRAPHENE/MOS2 HETER.（2） MOLYBDENUM DISULFID.（2） NORMAL COMPRESSIVE .（2）
SCHOTTKY BARRIER（2） TUNNELING TRANSISTO.（2）
出版物 CURRENT APPLIED PHY.（2）
出版时间 2014（2）
机构 UNIV ZANJAN（4） UNIV TEHRAN（3）
作者 GHOBADI N（9）

Band structure and Schottky barrier modulation in multilayer black phosphorene and black phosphorene/graphene heterostructure through out-of-plane strain

PHYSICA BCONDENSED MATTER

SHAMEKHI M, GHOBADI N

Normal compressive strain-induced modulation of electronic and mechanical properties of multilayer MoS2 and Graphene/MoS2 heterostructure: A first-principles study

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

GHOBADI N

On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors

JOURNAL OF APPLIED PHYSICS

GHOBADI N, POURFATH M

A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures

IEEE TRANSACTIONS ON ELECTRON DEVICES

GHOBADI N, POURFATH M

Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor

CURRENT APPLIED PHYSICS

GHOBADI N, ABDI Y

Investigation of gas sensing properties of armchair graphene nanoribbons

JOURNAL OF PHYSICSCONDENSED MATTER

MORADIAN R, MOHAMMADI Y, GHOBADI N

A comparative study of the mechanical properties of multilayer MoS2 and graphene/MoS2 heterostructure: effects of temperature, number of layers and stacking order

CURRENT APPLIED PHYSICS

GHOBADI N

Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing

IEEE ELECTRON DEVICE LETTERS

GHOBADI N, POURFATH M

Highly conductive supercapacitor based on laser-induced graphene and silver nanowires

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

MORADI SAH, GHOBADI N, ZAHRABI F