国家/地区 Iran（3）
关键词 TIGHTBINDING MODEL（3）
出版物
出版时间
机构
作者 MOUSAVI H（3）

Metal-semiconductor transition in F-graphene

MATERIALS TODAY COMMUNICATIONS

JALILVAND S, MOUSAVI H, IRANI M

A Green's function-tight-binding-based approach for T-graphene analysis

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

MOUSAVI H, JALILVAND S, PAIKAR S

Hydrogenation effects on the thermal and magnetic properties of mono- and bilayer graphene

CARBON LETTERS

SANI SS, MOUSAVI H, JALILVAND S, ASSHABI M