国家/地区 Iran（3）
关键词 SHORT CHANNEL EFFEC.（2）
出版物
出版时间 2016（3）
机构 KERMANSHAH U.（3）
作者 NADERI A（3）

Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions

JOURNAL OF COMPUTATIONAL ELECTRONICS

NADERI A

Higher Current Ratio and Improved Ambipolar Behavior in Graphene Nanoribbon Field Effect Transistors by Symmetric Pocket Doping Profile

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

NADERI A

Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region

SUPERLATTICES MICROSTRUCTURES

NADERI A