国家/地区 Iran（11）
关键词 BILAYER GRAPHENE NA.（2） INTERCONNECT（2） RECTIFIER（2）
STEP TIME RESPONSE（2） TIGHTBINDING（2） TRANSPORT PROPERTIE（2）
出版物 APPLIED PHYSICS AMA.（2） MICROELECTRONICS RE.（2） PHYSICA ELOWDIMENSI.（2）
出版时间 2015（3） 2019（3） 2018（2） 2020（2）
机构 ISLAMIC AZAD UNIV（11）
作者 HAJINASIRI S（11）

Graphene rotational switch through vacancy defect and nitrogen doping

MICRO NANO LETTERS

POLIKI M, GOLZANI M, HAJINASIRI S

The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

GOLZANI M, POLIKI M, HAJINASIRI S

Electronic and transport characteristics of vacancy and nitrogen-doped graphene nanoribbon rotational switch

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

POLIKI M, HAJINASIRI S

The effect of channel uniaxial strain on thermal conductivity of graphene nano-ribbon field effect transistor

MODERN PHYSICS LETTERS B

DOYOM EZ, HAJINASIRI S

A Functional Study of a Bilayer Graphene Nanoribbon FET With Four Different Gate Insulators

IEEE TRANSACTIONS ON NANOTECHNOLOGY

NAZARI A, SHAMLOO H, FAEZ R, HAJINASIRI S

The Effect of Line-Edge Roughness on Electronic Transport Characteristics of a Graphene Nanoribbon Rectifier

JOURNAL OF ELECTRONIC MATERIALS

GOLZANI M, HAJINASIRI S

The electronic transport properties of defected bilayer sliding armchair graphene nanoribbons

PHYSICS LETTERS A

MOHAMMADI A, HAJINASIRI S

Transfer matrix model of multilayer graphene nanoribbon interconnects

MICROELECTRONICS RELIABILITY

FOTOOHI S, HAJINASIRI S

A seamless-pitched graphene nanoribbon field effect transistor

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

HAJINASIRI S, MORAVVEJFARSHI MK, FAEZ R

Crosstalk bandwidth and stability analysis in graphene nanoribbon interconnects

MICROELECTRONICS RELIABILITY

BAGHERI A, RANJBAR M, HAJINASIRI S, MIRZAKUCHAKI S