国家/地区 Iran（6）
关键词 GNRFET（2） SHORT CHANNEL EFFEC.（2）
出版物 SUPERLATTICES MICRO.（2）
出版时间 2016（3）
机构 KERMANSHAH UNIV TECHNOL（6）
作者 NADERI A（6）

Electrically-activated source extension graphene nanoribbon field effect transistor: Novel attributes and design considerations for suppressing short channel effects

SUPERLATTICES MICROSTRUCTURES

NADERI A, KESHAVARZI P

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

NADERI A

Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions

JOURNAL OF COMPUTATIONAL ELECTRONICS

NADERI A

Higher Current Ratio and Improved Ambipolar Behavior in Graphene Nanoribbon Field Effect Transistors by Symmetric Pocket Doping Profile

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

NADERI A

Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region

SUPERLATTICES MICROSTRUCTURES

NADERI A

Theoretical analysis of a novel dual gate metal-graphene nanoribbon field effect transistor

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

NADERI A