国家/地区 Iran（3）
关键词 GRAPHENE NANORIBBON GNR（3）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（3）
出版时间 2018（2）
机构
作者

Impact of Phonon Scattering on the Negative-Differential-Resistance Behavior in Graphene Nanoribbon p-n Junctions

IEEE TRANSACTIONS ON ELECTRON DEVICES

ABEDI A, SHARIFI MJ

Role of Biasing and Device Size on Phonon Scattering in Graphene Nanoribbon Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

DINARVAND A

A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures

IEEE TRANSACTIONS ON ELECTRON DEVICES

GHOBADI N, POURFATH M