国家/地区 Italy（5）
关键词 GRAPHENE（2） SILICON COMPOUND（2）
出版物
出版时间 2009（5）
机构 CNR IMM（3）
作者 SONDE S（5）

Irradiation damage in graphene on SiO2 probed by local mobility measurements

APPLIED PHYSICS LETTERS

GIANNAZZO F, SONDE S, RAINERI V, RIMINI E

Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

PHYSICAL REVIEW B

SONDE S, GIANNAZZO F, RAINERI V, YAKIMOVA R, HUNTZINGER JR, TIBERJ A, CAMASSEL J

Ion irradiation and defect formation in single layer graphene

CARBON

COMPAGNINI G, GIANNAZZO F, SONDE S, RAINERI V, RIMINI E

Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

SONDE S, GIANNAZZO F, RAINERI V, RIMINI E

Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy

NANO LETTERS

GIANNAZZO F, SONDE S, RAINERI V, RIMINI E