国家/地区 Italy（13）
关键词 ATOMIC FORCE MICROS.（5） EPITAXIAL GRAPHENE（5） ATOMIC LAYER DEPOSI.（4）
GRAPHENE（4） RAMAN SPECTROSCOPY（2）
出版物 PHYSICA STATUS SOLI.（2）
出版时间 2020（3） 2017（2） 2019（2）
机构 CNR（13）
作者 GIANNAZZO F（13）

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

CARBON

SCHILIRO E, LO NIGRO R, PANASCI S, GELARDI FM, AGNELLO S, YAKIMOVA R, ROCCAFORTE F, GIANNAZZO F

Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

APPLIED SCIENCESBASEL

GIANNAZZO F, SCHILIRO E, LO NIGRO R, ROCCAFORTE F, YAKIMOVA R

Extensive Fermi-Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

SCIUTO A, LA MAGNA A, ANGILELLA GGN, PUCCI R, GRECO G, ROCCAFORTE F, GIANNAZZO F, DERETZIS I

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

NANOTECHNOLOGY

GIANNAZZO F, SHTEPLIUK I, IVANOV G, IAKIMOV T, KAKANAKOVAGEORGIEVA A, SCHILIRO E, FIORENZA P, YAKIMOVA R

Seed-Layer-Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

ADVANCED MATERIALS INTERFACES

SCHILIRO E, LO NIGRO R, ROCCAFORTE F, DERETZIS I, LA MAGNA A, ARMANO A, AGNELLO S, PECZ B, IVANOV IG, YAKIMOVA R, GIANNAZZO F

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

GIANNAZZO F, FISICHELLA G, GRECO G, SCHILIRO E, DERETZIS I, LO NIGRO R, LA MAGNA A, ROCCAFORTE F, IUCOLANO F, LO VERSO S, RAVESI S, PRYSTAWKO P, KRUSZEWSKI P, LESZCZYNSKI M, DAGHER R, FRAYSSINET E, MICHON A, CORDIER Y

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H-SiC (0001)

JOURNAL OF CRYSTAL GROWTH

GIANNAZZO F, DERETZIS I, NICOTRA G, FISICHELLA G, RAMASSE QM, SPINELLA C, ROCCAFORTE F, LA MAGNA A

Delaminated Graphene at Silicon Carbide Facets: Atomic Scale Imaging and Spectroscopy

ACS NANO

NICOTRA G, RAMASSE QM, DERETZIS I, LA MAGNA A, SPINELLA C, GIANNAZZO F

Graphene: Synthesis and nanoscale characterization of electronic properties

RIVISTA DEL NUOVO CIMENTO

GIANNAZZO F, RAINERI V

Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

SONDE S, GIANNAZZO F, RAINERI V, RIMINI E