国家/地区 Italy（6）
关键词 ATOMIC FORCE MICROSCOPY（6）
出版物
出版时间 2018（2）
机构 CNR（6）
作者 GIANNAZZO F（5） ROCCAFORTE F（5） LO NIGRO R（4） SCHILIRO E（4）
DERETZIS I（3） FISICHELLA G（3） LA MAGNA A（3） AGNELLO S（2）
RAVESI S（2） YAKIMOVA R（2）

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

CARBON

SCHILIRO E, LO NIGRO R, PANASCI S, GELARDI FM, AGNELLO S, YAKIMOVA R, ROCCAFORTE F, GIANNAZZO F

Seed-Layer-Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

ADVANCED MATERIALS INTERFACES

SCHILIRO E, LO NIGRO R, ROCCAFORTE F, DERETZIS I, LA MAGNA A, ARMANO A, AGNELLO S, PECZ B, IVANOV IG, YAKIMOVA R, GIANNAZZO F

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

GIANNAZZO F, FISICHELLA G, GRECO G, SCHILIRO E, DERETZIS I, LO NIGRO R, LA MAGNA A, ROCCAFORTE F, IUCOLANO F, LO VERSO S, RAVESI S, PRYSTAWKO P, KRUSZEWSKI P, LESZCZYNSKI M, DAGHER R, FRAYSSINET E, MICHON A, CORDIER Y

Atomic and electronic structure of Si dangling bonds in quasi-free-standing monolayer graphene

NANO RESEARCH

MURATA Y, CAVALLUCCI T, TOZZINI V, PAVLICEK N, GROSS L, MEYER G, TAKAMURA M, HIBINO H, BELTRAM F, HEUN S

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H-SiC (0001)

JOURNAL OF CRYSTAL GROWTH

GIANNAZZO F, DERETZIS I, NICOTRA G, FISICHELLA G, RAMASSE QM, SPINELLA C, ROCCAFORTE F, LA MAGNA A

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

ACS APPLIED MATERIALS INTERFACES

FISICHELLA G, SCHILIRO E, DI FRANCO S, FIORENZA P, LO NIGRO R, ROCCAFORTE F, RAVESI S, GIANNAZZO F