国家/地区 Japan（6）
关键词 EPITAXIAL LAYER（2）
出版物 PHYSICAL REVIEW B（6）
出版时间 2009（2） 2013（2）
机构 NTT CORP（6）
作者 KAGESHIMA H（6）

Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface

PHYSICAL REVIEW B

KAGESHIMA H, HIBINO H, YAMAGUCHI H, NAGASE M

Self organization of a hexagonal network of quasi-free-standing monolayer graphene nanoribbons

PHYSICAL REVIEW B

MURATA Y, TAKAMURA M, KAGESHIMA H, HIBINO H

First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)

PHYSICAL REVIEW B

INOUE M, KAGESHIMA H, KANGAWA Y, KAKIMOTO K

Carrier transport mechanism in graphene on SiC(0001)

PHYSICAL REVIEW B

TANABE S, SEKINE Y, KAGESHIMA H, NAGASE M, HIBINO H

Stacking domains of epitaxial few-layer graphene on SiC(0001)

PHYSICAL REVIEW B

HIBINO H, MIZUNO S, KAGESHIMA H, NAGASE M, YAMAGUCHI H

Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy

PHYSICAL REVIEW B

HIBINO H, KAGESHIMA H, KOTSUGI M, MAEDA F, GUO FZ, WATANABE Y