国家/地区 Korea（3）
关键词 SCHOTTKY BARRIER HEIGHT（3）
出版物 ACS NANO（2）
出版时间 2020（2）
机构 SUNGKYUNKWAN.（3）
作者 KANG WT（3）

Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor

ACS NANO

LEE I, KANG WT, KIM JE, KIM YR, WON UY, LEE YH, YU WJ

Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

ACS APPLIED MATERIALS INTERFACES

LEE I, KIM JN, KANG WT, SHIN YS, LEE BH, YU WJ

Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier

ACS NANO

LEE I, KANG WT, SHIN YS, KIM YR, WON UY, KIM K, DUONG DL, LEE K, HEO J, LEE YH, YU WJ