国家/地区 Korea（23）
关键词 GRAPHENE（4） GRAPHENE OXIDE（2） INSULIN（2）
REDUCED GRAPHENE OX.（2）
出版物 NANOSCALE（3） ADVANCED FUNCTIONAL.（2） SCIENTIFIC REPORTS（2）
SEMICONDUCTOR SCIEN.（2）
出版时间 2016（23）
机构 SEOUL NATL U.（5） ULSAN NATL I.（3） GACHON UNIV（2） HANYANG UNIV（2）
SUNGKYUNKWAN.（2）
作者 PARK J（23）

Graphene Oxide Assisted Synthesis of Self-assembled Zinc Oxide for Lithium-Ion Battery Anode

CHEMISTRY OF MATERIALS

KIM C, KIM JW, KIM H, KIM DH, CHOI C, JUNG YS, PARK J

Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene

SCIENTIFIC REPORTS

KIM Y, PARK J, SONG I, OK JM, JO Y, WATANABE K, TANIQUCHI T, CHOI HC, LEE DS, JUNG S, KIM JS

Graphene oxide induces apoptotic cell death in endothelial cells by activating autophagy via calcium-dependent phosphorylation of c-Jun N-terminal kinases

ACTA BIOMATERIALIA

LIM MH, JEUNG IC, JEONG J, YOON SJ, LEE SH, PARK J, KANG YS, LEE H, PARK YJ, LEE HG, LEE SJ, HAN BS, SONG NW, LEE SC, KIM JS, BAE KH, MIN JK

Low temperature hydrogen sensing using reduced graphene oxide and tin oxide nanoflowers based hybrid structure

SEMICONDUCTOR SCIENCE TECHNOLOGY

VENKATESAN A, RATHI S, LEE IY, PARK J, LIM D, KIM GH, KANNAN ES

Nanoscale Direct Mapping of Noise Source Activities on Graphene Domains

ACS NANO

LEE H, CHO D, SHEKHAR S, KIM J, PARK J, HONG BH, HONG S

Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KIM YH, HAN S, CHO I, LEE J, PARK J

Scalable ZnO nanotube arrays grown on CVD-graphene films

APL MATERIALS

PARK JB, OH H, PARK J, KIM NJ, YOON H, YI GC

Engineering structures and functions of mesenchymal stem cells by suspended large-area graphene nanopatterns

2D MATERIALS

KIM J, BAE WG, PARK S, KIM YJ, JO I, PARK S, JEON NL, KWAK W, CHOI S, PARK J, KIM HN, CHOI KS, SEONWOO H, CHOUNG YH, CHOUNG PH, HONG BH, CHUNG JH

Patterning of graphene for flexible electronics with remote atmospheric-pressure plasma using dielectric barrier

JAPANESE JOURNAL OF APPLIED PHYSICS

KIM DJ, PARK J, HAN JG

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

ACS Nano

LEE Y, JEON W, CHO Y, LEE MH, JEONG SJ, PARK J, PARK S