国家/地区 Korea（7）
关键词 GRAPHENE（7）
出版物 NANOPHOTONICS（2）
出版时间 2018（2） 2019（2） 2021（2）
机构 GWANGJU INST.（3）
作者 YOO TJ（7）

High-Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene/Germanium Schottky Junction

ADVANCED ELECTRONIC MATERIALS

CHANG KE, KIM C, YOO TJ, KWON MG, HEO S, KIM SY, HYUN Y, YOO JI, KO HC, LEE BH

Advantages of a buried-gate structure for graphene field-effect transistor

SEMICONDUCTOR SCIENCE TECHNOLOGY

LEE SK, KIM YJ, HEO S, PARK W, YOO TJ, CHO C, HWANG HJ, LEE BH

Gate-Controlled Graphene-Silicon Schottky Junction Photodetector

SMALL

CHANG KE, YOO TJ, KIM C, KIM YJ, LEE SK, KIM SY, HEO S, KWON MG, LEE BH

Zero-Bias Operation of CVD Graphene Photodetector with Asymmetric Metal Contacts

ACS PHOTONICS

YOO TJ, KIM YJ, LEE SK, KANG CG, CHANG KE, HWANG HJ, REVANNATH N, LEE BH

A Facile Method for Improving Detectivity of Graphene/p-Type Silicon Heterojunction Photodetector

LASER PHOTONICS REVIEWS

YOO TJ, KIM SY, KWON MG, KIM C, CHANG KE, HWANG HJ, LEE BH

High-performance near-infrared photodetectors based on gate-controlled graphene-germanium Schottky junction with split active junction

NANOPHOTONICS

KIM C, YOO TJ, KWON MG, CHANG KE, HWANG HJ, LEE BH

Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer

NANOPHOTONICS

KIM C, YOO TJ, CHANG KE, KWON MG, HWANG HJ, LEE BH