国家/地区 Korea（3）
关键词 NTYPE GE（2） SCHOTTKY BARRIER DI.（2）
出版物 JOURNAL OF ALLOYS C.（2）
出版时间
机构 CHONBUK NATL UNIV（3）
作者 YUN HJ（3）

Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

JOURNAL OF ALLOYS COMPOUNDS

KHURELBAATAR Z, KIL YH, YUN HJ, SHIM KH, NAM JT, KIM KS, LEE SK, CHOI CJ

Modification of Schottky barrier properties of Al/p-type Si Schottky rectifiers with graphene-oxide-doped poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) interlayer

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

JANARDHANAM V, JYOTHI I, YUK SH, CHOI CJ, YUN HJ, WON J, HONG WG, LEE SN, REDDY VR

Temperature dependent current-voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

JOURNAL OF ALLOYS COMPOUNDS

KHURELBAATAR Z, KANG MS, SHIM KH, YUN HJ, LEE J, HONG H, CHANG SY, LEE SN, CHOI CJ