国家/地区 Malaysia（6）
关键词 BILAYER GRAPHENE NA.（2）
出版物 JOURNAL OF COMPUTAT.（3） MICROELECTRONICS RE.（2）
出版时间 2011（2） 2013（2）
机构 UTM（2） UNIV SAINS M.（2） UNIV TEKNOLO.（2）
作者 SADEGHI H（6）

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors (vol 53, pg 540, 2013)

MICROELECTRONICS RELIABILITY

GHADIRY M, NADI M, BAHADORAN M, MANAF AABD, KARIMI H, SADEGHI H

Bilayer Graphene Nanoribbon Mobility Model in Ballistic Transport Limit

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

MOUSAVI SM, AHMADI MT, SADEGHI H, NILGHAZ A, KIANI MJ, ISMAIL R

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

MICROELECTRONICS RELIABILITY

GHADIRY M, NADI M, BAHADORIAN M, MANAF AABD, KARIMI H, SADEGHI H

CHANNEL CONDUCTANCE OF ABA STACKING TRILAYER GRAPHENE NANORIBBON FIELD-EFFECT TRANSISTOR

MODERN PHYSICS LETTERS B

SADEGHI H, AHMADI MT, MOUSAVI SM, ISMAIL R

Ballistic Conductance Model of Bilayer Graphene Nanoribbon (BGN)

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

SADEGHI H, AHMADI MT, ISHAK BI, MOUSAVI SM, ISMAIL R

Bilayer Graphene Nanoribbon Carrier Statistic in Degenerate and Non Degenerate Limit

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

MOUSAVI SM, AHMADI MT, SADEGHI H, NILGHAZ A, AMIN A, JOHARI Z, ISMAIL R