国家/地区 |
Russia(3)![]() |
关键词 | |
出版物 | |
出版时间 | |
机构 | AV RZHANOV I.(2) |
作者 |
SELEZNEV VA(3)![]() |
SEMICONDUCTORS
ANTONOVA IV, GOLOD SV, SOOTS RA, KOMONOV AI, SELEZNEV VA, SERGEEV MA, VOLODIN VA, PRINZ VY
High carrier mobility in chemically modified graphene on an atomically flat high-resistive substrate
JOURNAL OF PHYSICS DAPPLIED PHYSICS
KOTIN IA, ANTONOVA IV, KOMONOV AI, SELEZNEV VA, SOOTS RA, PRINZ VY
NANOTECHNOLOGY
ANTONOVA IV, MUTILIN SV, SELEZNEV VA, SOOTS RA, VOLODIN VA, PRINZ VY