国家/地区 Sweden（6）
关键词 EPITAXIAL GRAPHENE（2）
出版物
出版时间 2017（2）
机构 LINKOPING UNIV（6）
作者 BOUHAFS C（6）

Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC

APL MATERIALS

PERSSON I, ARMAKAVICIUS N, BOUHAFS C, STANISHEV V, KUHNE P, HOFMANN T, SCHUBERT M, ROSEN J, YAKIMOVA R, PERSSON POA, DARAKCHIEVA V

Morphological and electronic properties of epitaxial graphene on SiC

PHYSICA BCONDENSED MATTER

YAKIMOVA R, IAKIMOV T, YAZDI GR, BOUHAFS C, ERIKSSON J, ZAKHAROV A, BOOSALIS A, SCHUBERT M, DARAKCHIEVA V

Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies

APPLIED SURFACE SCIENCE

ARMAKAVICIUS N, BOUHAFS C, STANISHEV V, KUHNE P, YAKIMOVA R, KNIGHT S, HOFMANN T, SCHUBERT M, DARAKCHIEVA V

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

CARBON

BOUHAFS C, ZAKHAROV AA, IVANOV IG, GIANNAZZO F, ERIKSSON J, STANISHEV V, KUHNE P, IAKIMOV T, HOFMANN T, SCHUBERT M, ROCCAFORTE F, YAKIMOVA R, DARAKCHIEVA V

Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

APPLIED PHYSICS LETTERS

BOUHAFS C, STANISHEV V, ZAKHAROV AA, HOFMANN T, KUHNE P, IAKIMOV T, YAKIMOVA R, SCHUBERT M, DARAKCHIEVA V

Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)

JOURNAL OF APPLIED PHYSICS

BOUHAFS C, DARAKCHIEVA V, PERSSON IL, TIBERJ A, PERSSON POA, PAILLET M, ZAHAB AA, LANDOIS P, JUILLAGUET S, SCHOCHE S, SCHUBERT M, YAKIMOVA R