国家/地区 Sweden（8）
关键词
出版物 CARBON（4） APPLIED PHYSICS LET.（2）
出版时间 2015（4） 2013（2） 2014（2）
机构 LINKOPING UN.（4） CHALMERS（2） CHALMERS UNI.（2）
作者 JANZEN E（8）

High thermal stability quasi-free-standing bilayer graphene formed on 4H-SiC(0001) via platinum intercalation

CARBON

XIA C, JOHANSSON LI, NIU YR, ZAKHAROV AA, JANZEN E, VIROJANADARA C

Layer-number determination in graphene on SiC by reflectance mapping

CARBON

IVANOV IG, HASSAN JU, IAKIMOV T, ZAKHAROV AA, YAKIMOVA R, JANZEN E

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

JOURNAL OF APPLIED PHYSICS

WINTERS M, HASSAN J, ZIRATH H, JANZEN E, RORSMAN N

Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC

CRYSTALS

JOHANSSON LI, XIA C, HASSAN JU, IAKIMOV T, ZAKHAROV AA, WATCHARINYANON S, YAKIMOVA R, JANZEN E, VIROJANADARA C

Graphene self-switching diodes as zero-bias microwave detectors (vol 106, 093116, 2015)

APPLIED PHYSICS LETTERS

WESTLUND A, WINTERS M, IVANOV IG, HASSAN J, NILSSON PA, JANZEN E, RORSMAN N, GRAHN J

Graphene self-switching diodes as zero-bias microwave detectors

APPLIED PHYSICS LETTERS

WESTLUND A, WINTERS M, IVANOV IG, HASSAN JU, NILSSON PA, JANZEN E, RORSMAN N, GRAHN J

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers

CARBON

HASSAN J, WINTERS M, IVANOV IG, HABIBPOUR O, ZIRATH H, RORSMAN N, JANZEN E

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

CARBON

WINTERS M, HABIBPOUR O, IVANOV IG, HASSAN J, JANZEN E, ZIRATH H, RORSMAN N