国家/地区 Sweden（7）
关键词
出版物 PHYSICAL CHEMISTRY .（3）
出版时间
机构 LINKOPING UN.（3）
作者 KAKANAKOVAGEORGIEVA A（7）

Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface

NANOSCALE

KAKANAKOVAGEORGIEVA A, GUEORGUIEV GK, SANGIOVANNI DG, SUWANNAHARN N, IVANOV IG, CORA I, PECZ B, NICOTRA G, GIANNAZZO F

Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

SHTEPLIUK I, IVANOV IG, IAKIMOV T, YAKIMOVA R, KAKANAKOVAGEORGIEVA A, FIORENZA P, GIANNAZZO F

Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

SANGIOVANNI DG, GUEORGUIEV GK, KAKANAKOVAGEORGIEVA A

Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties

NANOTECHNOLOGY

DOS SANTOS RB, MOTA FD, RIVELINO R, KAKANAKOVAGEORGIEVA A, GUEORGUIEV GK

MOCVD of AlN on epitaxial graphene at extreme temperatures

CRYSTENGCOMM

KAKANAKOVAGEORGIEVA A, IVANOV IG, SUWANNAHARN N, HSU CW, CORA I, PECZ B, GIANNAZZO F, SANGIOVANNI DG, GUEORGUIEV GK

Discovering atomistic pathways for supply of metal atoms from methyl-based precursors to graphene surface

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

SANGIOVANNI DG, FACCIO R, GUEORGUIEV GK, KAKANAKOVAGEORGIEVA A

Discovering atomistic pathways for supply of metal atoms from methyl-based precursors to graphene surface (vol 25, pg 829, 2023)

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

SANGIOVANNI DG, FACCIO R, GUEORGUIEV GK, KAKANAKOVAGEORGIEVA A