国家/地区 Sweden（12）
关键词
出版物 APPLIED PHYSICS LET.（3） JOURNAL OF APPLIED .（3） CARBON（2）
出版时间 2015（6） 2016（2） 2017（2）
机构 CHALMERS UNI.（7） CHALMERS（3）
作者 RORSMAN N（12）

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

JOURNAL OF APPLIED PHYSICS

WINTERS M, HASSAN J, ZIRATH H, JANZEN E, RORSMAN N

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

IEEE MICROWAVE WIRELESS COMPONENTS LETTERS

HABIBPOUR O, HE ZS, STRUPINSKI W, RORSMAN N, CIUK T, CIEPIELEWSKI P, ZIRATH H

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

SCIENTIFIC REPORTS

HABIBPOUR O, HE ZS, STRUPINSKI W, RORSMAN N, ZIRATH H

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

AIP ADVANCES

WINTERS M, SVEINBJORNSSON EO, MELIOS C, KAZAKOVA O, STRUPINSKI W, RORSMAN N

Graphene FET Gigabit ON-OFF Keying Demodulator at 96 GHz

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, HE ZS, STRUPINSKI W, RORSMAN N, CIUK T, CIEPIELEWSKI P, ZIRATH H

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

APPLIED PHYSICS LETTERS

WINTERS M, THORSELL M, STRUPINSKI W, RORSMAN N

Graphene self-switching diodes as zero-bias microwave detectors (vol 106, 093116, 2015)

APPLIED PHYSICS LETTERS

WESTLUND A, WINTERS M, IVANOV IG, HASSAN J, NILSSON PA, JANZEN E, RORSMAN N, GRAHN J

Graphene self-switching diodes as zero-bias microwave detectors

APPLIED PHYSICS LETTERS

WESTLUND A, WINTERS M, IVANOV IG, HASSAN JU, NILSSON PA, JANZEN E, RORSMAN N, GRAHN J

Hysteresis modeling in graphene field effect transistors

JOURNAL OF APPLIED PHYSICS

WINTERS M, SVEINBJORNSSON EO, RORSMAN N

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers

CARBON

HASSAN J, WINTERS M, IVANOV IG, HABIBPOUR O, ZIRATH H, RORSMAN N, JANZEN E