国家/地区 Sweden（3）
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机构 CHALMERS（3）
作者 RORSMAN N（3）

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

JOURNAL OF APPLIED PHYSICS

WINTERS M, HASSAN J, ZIRATH H, JANZEN E, RORSMAN N

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

IEEE MICROWAVE WIRELESS COMPONENTS LETTERS

HABIBPOUR O, HE ZS, STRUPINSKI W, RORSMAN N, CIUK T, CIEPIELEWSKI P, ZIRATH H

Graphene self-switching diodes as zero-bias microwave detectors (vol 106, 093116, 2015)

APPLIED PHYSICS LETTERS

WESTLUND A, WINTERS M, IVANOV IG, HASSAN J, NILSSON PA, JANZEN E, RORSMAN N, GRAHN J