国家/地区 Sweden（4）
关键词 FIELDEFFECT TRANSISTOR（4）
出版物 IEEE ELECTRON DEVIC.（2）
出版时间 2020（2）
机构 CHALMERS UNI.（3）
作者 STAKE J（4）

Effects of Self-Heating on f(T) and f(max) Performance of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

BONMANN M, KRIVIC M, YANG XX, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

Graphene Field-Effect Transistors With High Extrinsic f(T) and f(max)

IEEE ELECTRON DEVICE LETTERS

BONMANN M, ASAD M, YANG XX, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

Graphene FET on Diamond for High-Frequency Electronics

IEEE ELECTRON DEVICE LETTERS

ASAD M, MAJDI S, VOROBIEV A, JEPPSON K, ISBERG J, STAKE J