国家/地区 Sweden（3）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（3）
出版时间
机构
作者 RORSMAN N（3）

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

JOURNAL OF APPLIED PHYSICS

WINTERS M, HASSAN J, ZIRATH H, JANZEN E, RORSMAN N

Hysteresis modeling in graphene field effect transistors

JOURNAL OF APPLIED PHYSICS

WINTERS M, SVEINBJORNSSON EO, RORSMAN N

Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors

JOURNAL OF APPLIED PHYSICS

RODRIGUES IH, RORSMAN N, VOROBIEV A