国家/地区 Taiwan（14）
关键词 GRAPHENE（3） DEFECT（2） SI（2）
出版物 APPLIED PHYSICS LET.（5） APPLIED PHYSICS AMA.（3）
出版时间 2014（6） 2012（3） 2013（3）
机构 NATL CHANGHU.（14）
作者 ZENG JJ（14）

Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

APPLIED SURFACE SCIENCE

LIN YJ, ZENG JJ

Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

ZENG JJ, LIN YJ

Tuning the work function of graphene by nitrogen plasma treatment with different radio-frequency powers

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ

Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

MATERIALS CHEMISTRY PHYSICS

ZENG JJ, LIN YJ

Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ

Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

THIN SOLID FILMS

LIN JH, ZENG JJ, LIN YJ

Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer

SEMICONDUCTOR SCIENCE TECHNOLOGY

ZENG JJ, RUAN CH, LIN JH, LIN YJ

Tuning the work function of graphene by ultraviolet irradiation

APPLIED PHYSICS LETTERS

LIN YJ, ZENG JJ

Hybrid diodes based on n-type Ge and conductive polymer doped by graphene oxide sheets with and without reduction treatment

JOURNAL OF APPLIED PHYSICS

ZENG JJ, LIN YJ

Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs

SYNTHETIC METALS

ZENG JJ, TSAI CL, LIN YJ