国家/地区 Taiwan（4）
关键词 ELECTRICAL PROPERTY（4）
出版物
出版时间 2014（2）
机构 NATL CHANGHU.（3）
作者 LIN YJ（3） LIN JH（2）

The transmittance and sheet resistance of chemically and heat reduced graphene oxide film

OPTICAL QUANTUM ELECTRONICS

CHANG CW, HON MH, LEU IC

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

APPLIED SURFACE SCIENCE

LIN YJ, LIN JH

Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

THIN SOLID FILMS

LIN JH, ZENG JJ, LIN YJ

Correlation between phonon and impurity scatterings, potential fluctuations and leakage conduction of graphene/n-type Si Schottky diodes

SUPERLATTICES MICROSTRUCTURES

LIN YJ