国家/地区 Taiwan（6）
关键词 DEFECT（2） GRAPHENE（2） SI（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2014（6）
机构 NATL CHANGHUA UNIV EDUC（6）
作者 ZENG JJ（6）

Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

APPLIED SURFACE SCIENCE

LIN YJ, ZENG JJ

Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

ZENG JJ, LIN YJ

Tuning the work function of graphene by nitrogen plasma treatment with different radio-frequency powers

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ

Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

MATERIALS CHEMISTRY PHYSICS

ZENG JJ, LIN YJ

Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ

Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

THIN SOLID FILMS

LIN JH, ZENG JJ, LIN YJ