国家/地区 Uruguay（10）
关键词 GRAPHENE（4） DFT（2） SILICON CARBIDE（2）
出版物 COMPUTATIONAL THEOR.（2） JOURNAL OF PHYSICAL.（2）
出版时间 2019（3） 2021（2）
机构 UDELAR（6）
作者 HUELMO CP（10）

Structural and magnetic properties of a defective graphene buffer layer grown on SiC(0001): a DFT study

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

HUELMO CP, MENEZES MG, CAPAZ RB, DENIS PA

Silicon Carbide Induced Doping of Graphene: A New Potential Synthetic Route for SiC3 Siligraphene

JOURNAL OF PHYSICAL CHEMISTRY C

HUELMO CP, DENIS PA

Unraveling the electromagnetic structure of the epitaxial graphene buffer layer

JOURNAL OF PHYSICSCONDENSED MATTER

HUELMO CP, DENIS PA

Cycloaddition reactions on epitaxial graphene

NEW JOURNAL OF CHEMISTRY

DENIS PA, HUELMO CP, IRIBARNE F

Theoretical characterization of sulfur and nitrogen dual-doped graphene

COMPUTATIONAL THEORETICAL CHEMISTRY

DENIS PA, HUELMO CP, IRIBARNE F

On the band gaps and effective masses of mono and dual doped monolayer graphene

COMPUTATIONAL MATERIALS SCIENCE

DENIS PA, HUELMO CP, IRIBARNE F

Band Gap Opening in Dual-Doped Monolayer Graphene

JOURNAL OF PHYSICAL CHEMISTRY C

DENIS PA, HUELMO CP, MARTINS AS

Structural characterization and chemical reactivity of dual doped graphene

CARBON

DENIS PA, HUELMO CP

Elucidating the electronic and magnetic properties of epitaxial graphene grown on SiC with a defective buffer layer

JOURNAL OF MATERIALS SCIENCE

HUELMO CP, IRIBARNE F, DENIS PA

Impact of oxygen adsorption on the electronic properties and contact type of a defective epitaxial graphene-SiC interface

COMPUTATIONAL THEORETICAL CHEMISTRY

HUELMO CP, DENIS PA