国家/地区 Usa（3）
关键词 RF ANALOG DEVICE（3）
出版物 IEEE ELECTRON DEVIC.（2）
出版时间 2013（2）
机构 UNIV TEXAS A.（3）
作者 AKINWANDE D（3）

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

ACS NANO

LEE J, HA TJ, LI HF, PARRISH KN, HOLT M, DODABALAPUR A, RUOFF RS, AKINWANDE D

High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

IEEE ELECTRON DEVICE LETTERS

LEE J, HA TJ, PARRISH KN, CHOWDHURY SF, TAO L, DODABALAPUR A, AKINWANDE D

Extremely High-Frequency Flexible Graphene Thin-Film Transistors

IEEE ELECTRON DEVICE LETTERS

PARK S, SHIN SH, YOGEESH MN, LEE AL, RAHIMI S, AKINWANDE D