国家/地区 Usa（8）
关键词
出版物 APPLIED PHYSICS LET.（3）
出版时间 2015（3） 2012（2）
机构 USAF（4）
作者 ELHAMRI S（8）

Abnormal hopping conduction in semiconducting polycrystalline graphene

PHYSICAL REVIEW B

PARK J, MITCHEL WC, ELHAMRI S, GRAZULIS L, ALTFEDER I

Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy (vol 100, 133107, 2012)

APPLIED PHYSICS LETTERS

PARK J, MITCHEL WC, ELHAMRI S, BACK TC

Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy grown

APPLIED PHYSICS LETTERS

PARK J, MITCHEL WC, ELHAMRI S, BACK TC

Band gap formation in graphene by in-situ doping

APPLIED PHYSICS LETTERS

PARK J, MITCHEL WC, BROWN GJ, ELHAMRI S, GRAZULIS L, SMITH HE, PACLEY SD, BOECKL JJ, EYINK KG, MOU S, TOMICH DH, HOELSCHER JE

Direct graphene growth on transitional metal with solid carbon source and its converting into graphene/transitional metal oxide heterostructure

CARBON

PARK J, BACK T, FAIRCHILD SB, MITCHEL WC, ELHAMRI S, BOECKL J, MARTINOTTI D, DOUILLARD L, SOUKIASSIAN P

Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric

JOURNAL OF ELECTRONIC MATERIALS

WILLIAMS AD, OUCHEN F, KIM SS, NGO YH, ELHAMRI S, SIWECKI A, MOU S, CAMPO EM, KOZLOWSKI G, NAIK RR, GROTE J

Approach to multifunctional device platform with epitaxial graphene on transition metal oxide

SCIENTIFIC REPORTS

PARK J, BACK T, MITCHEL WC, KIM SS, ELHAMRI S, BOECKL J, FAIRCHILD SB, NAIK R, VOEVODIN AA

Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene

NATURE COMMUNICATIONS

PARK J, MITCHEL WC, ELHAMRI S, GRAZULIS L, HOELSCHER J, MAHALINGAM K, HWANG C, MO SK, LEE J