国家/地区 Usa（4）
关键词
出版物
出版时间 2010（4）
机构 CARNEGIE MEL.（2）
作者 FEENSTRA RM（4）

Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces

PHYSICAL REVIEW B

LUXMI, SRIVASTAVA N, HE G, FEENSTRA RM, FISHER PJ

Thickness monitoring of graphene on SiC using low-energy electron diffraction

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

FISHER PJ, LUXMI, SRIVASTAVA N, NIE S, FEENSTRA RM

Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LUXMI, SRIVASTAVA N, FEENSTRA RM, FISHER PJ

Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene

NANO LETTERS

HUANG LB, HARTLAND GV, CHU LQ, LUXMI, FEENSTRA RM, LIAN CX, TAHY K, XING HL