国家/地区 Usa（15）
关键词 GRAPHENE（6） FERROELECTRIC（2）
出版物 PHYSICAL REVIEW LET.（4） NANO LETTERS（3） PHYSICAL REVIEW B（3）
APPLIED PHYSICS LET.（2）
出版时间 2012（3） 2009（2） 2010（2） 2011（2） 2017（2）
机构 PENN STATE U.（8） UNIV NEBRASK.（3） UNIV NEBRASK.（2）
作者 HONG X（15）

Examining Graphene Field Effect Sensors for Ferroelectric Thin Film Studies

NANO LETTERS

RAJAPITAMAHUNI A, HOFFMAN J, AHN CH, HONG X

Comment on "Evidence for Spin-Flip Scattering and Local Moments in Dilute Fluorinated Graphene'' Reply

PHYSICAL REVIEW LETTERS

HONG X, ZOU K, WANG B, CHENG SH, ZHU J

Integrating functional oxides with graphene

SOLID STATE COMMUNICATIONS

HONG X, ZOU K, DASILVA AM, AHN CH, ZHU J

Evidence for Spin-Flip Scattering and Local Moments in Dilute Fluorinated Graphene

PHYSICAL REVIEW LETTERS

HONG X, ZOU K, WANG B, CHENG SH, ZHU J

Effective mass of electrons and holes in bilayer graphene: Electron-hole asymmetry and electron-electron interaction

PHYSICAL REVIEW B

ZOU K, HONG X, ZHU J

Colossal negative magnetoresistance in dilute fluorinated graphene

PHYSICAL REVIEW B

HONG X, CHENG SH, HERDING C, ZHU J

Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

PHYSICAL REVIEW LETTERS

ZOU K, HONG X, KEEFER D, ZHU J

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O-3

APPLIED PHYSICS LETTERS

HONG X, HOFFMAN J, POSADAS A, ZOU K, AHN CH, ZHU J

Quantum scattering time and its implications on scattering sources in graphene

PHYSICAL REVIEW B

HONG X, ZOU K, ZHU J

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

PHYSICAL REVIEW LETTERS

HONG X, POSADAS A, ZOU K, AHN CH, ZHU J